Abstract
Structural and electrical investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces for SBT, PZT and BiT ferroelectric thin films. C-V characteristics and interface trap measurements show a large difference for Au-Ferroelectric-Si structures depending on whether the interface is fabricated by bonding or by direct deposition. For reacted interfaces the trap densities are ranging from 2×1012 cm−2 eV−1 for SBT/Si and BiT/Si to 2×1013 cm−2eV−1 for PZT/Si. For bonded interfaces, independent of the top ferroelectric layer, the trap density is about 4×1011 cm−2eV−1.