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IX. Microstructure, defects and processing-thin films

Preparation of La1−xSrxCoO3 electrodes for ferroelectric thin films by rf magnetron sputtering

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Pages 335-341 | Received 23 Aug 1998, Accepted 11 Sep 1998, Published online: 09 Mar 2011
 

Abstract

(100)-oriented stoichiometric LSCO films were deposited on Pt/TiO2/SiO2/Si, TiO2/Pt/TiO2/SiO2/Si and Si substrates with rf magnetron sputtering using a single self fabricated oxide target. Best conductive LSCO film was obtained at 600°C, yielding a specific resistivity of 90 μΩCm. The PZT film deposited on the LSCO(100) electrode oriented to (100) or (001). Maximum value of d33 coefficient was 73.5 pm/V.

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