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Original Articles

Dielectric permittivity and Fe-and Cu-doping effect in KTaO3 AND K1-xLixTaO3

, , , , , , & show all
Pages 59-76 | Received 05 Sep 1999, Published online: 26 Oct 2011
 

Abstract

The temperature-frequency behavior of the permittivity ϵ' (T, f) and tan[δ(T, f)] (5—300 K, 100 Hz-1 MHz) were comparatively studied in nominal pure KTaO3 and K1-xLixTaO3 (x = 0.001, 0.01 and 0.03) doped by Cu and Fe single crystals. In the ϵ' (T, f) behavior doping of KTaO3 by Fe (1 wt%) and Cu (0.8 and 3 wt%) results in ϵ' increasing at lowest temperatures up to ≈ 6000 at 5K) only. However for tan [δ(T, f)] a pronounced dielectric dispersion occurs below 70 K, with tan [δ(T)] maxima positions obeying the Arrhenius law with universal values of activation energy Δ ≈ 900—1000 K and of high temperature relaxation time τ0 ∽ 10−14 s. In contrast, in K1-xLixTaO3 doping by Cu and Fe results in a well pronounced low-temperature dielectric relaxation contribution in the ϵ' (T, f) behavior and dipole ordering effects. This effect appears to be very strong for Cu doping. So in K0.97Li0.03TaO3:Cu (0.2 wt%) appearance of a low temperature phase transition is suggested. The possible mechanisms of polarization relaxation, dipole ordering and ferroelectric-type phase transition with a critical dynamic central peak in K1-xLixTaO3 doped by strong soft dipole defects are discussed.

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