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Ferroelectrics Volume 223, 1999 - Issue 1
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I. Domains, phase transitions, structure and size effects

Influence of defects and conductivity on the phase transitions and the domain structure properties in ferroelectric-semiconductors Sn2P2S(Se)6

Yu. M. Vysochanskii Institute for Solid State Physics and Chemistry, Uzhgorod University, Pidgirna str 46, Uzhgorod, 294000, Ukraine
,
A. A. Molnar Institute for Solid State Physics and Chemistry, Uzhgorod University, Pidgirna str 46, Uzhgorod, 294000, Ukraine
&
M. M. Khoma Institute for Solid State Physics and Chemistry, Uzhgorod University, Pidgirna str 46, Uzhgorod, 294000, Ukraine
Pages 19-26 | Received 23 Aug 1998, Accepted 17 Sep 1998, Published online: 09 Mar 2011
 
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Abstract

The influence of the static defects and charge carriers on the dielectric permeability temperature anomalies at the phase transitions (PT) from paraelectric phase to incommensurate (IC) phase and from IC phase to ferroelectric one has been determined for Sn2P2S(Se)6 crystals. For these crystals with controlled content of impurities the memory effect recording in IC phase was compared with the dielectric output of the domain walls in ferroelectric phase. The experimental data are analyzed in the mean-field approximation

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