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Abstract
A Class E RF amplifier, which can operate into any load conditions without need for other additional circuitry to protect transistors, is introduced. This is provided by the new topology, which is called an inductive clamp. Our topology incorporates inductive clamp circuitry to the basic Class E amplifier circuit and it has all the benefits of Class E amplifiers. Additionally, it has inherent self-protection that comes with the inductive clamp circuit. A Class E amplifier with the new topology is designed, simulated and implemented. The experimental results are presented and found to be very close to the simulated results. The amplifier drain efficiency is measured around 88% at the rated power level and it is confirmed that the amplifier protected itself and was stable over entire VSWR and dynamic range within the bandwidth of operational frequency. Class E amplifiers with this topology can be used in applications where the load conditions are dynamic.