Full article: Correction

Views

CrossRef citations to date

Altmetric

This article refers to:

Architecture-level energy model for high-capacity STT-MRAM memory

Article title: Architecture-level energy model for high-capacity STT-MRAM memory

Authors: Ruoxue Yong, Hui Lin & Yanfeng Jiang

Journal: TETN: International Journal of Electronics

DOI:https://doi.org/10.1080/00207217.2024.2312561

The author sequence of the article originally published with “Hui Lin, Ruoxue Yong & Yanfeng Jiang” has been revised to “Ruoxue Yong, Hui Lin & Yanfeng Jiang”.

These changes have been implemented in the main article, and it has been republished

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Correction

Information for

Open access

Opportunities

Help and information

Correction

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Your download is now in progress and you may close this window

Login or register to access this feature

Information for

Open access

Opportunities

Help and information

Keep up to date