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Abstract
A consistent theory of transport phenomena in non-crystalline semi-conductors is presented, which is related to negative-U centres associated with soft atomic configurations. An analysis of the energy dependence of transition probabilities for capture and recombination is given. A new recombination channel associated with the singly-occupied negative-U centres is described. Manifestations of both con-linuum propenies and effeciive discrete energy-level features of the mobiliiy-gap spectrum in glassy semiconductors are considered.
Notes
† This paper was presented at the Fourth International Workshop on the Electronic Properties of Metal/Non-metal Microsystems, held al Sheffield Hallam University, U.K., on 31 August to 3 September 1993.