Electronic structure of trilayer graphene with internal layer broken

Abstract

Gated trilayer graphene shows an energy gap and three topologically protected gapless states when the stacking order changes from ABC to CBA. Here we investigate such a trilayer, but with a part of the internal layer cut and removed forming a region in trilayer built of only two not connected single graphene layers. We demonstrate that the electronic structure of this region is almost the same as that of the gated trilayer. Curiously, the topological gapless states that appear due to differences in the stacking order of the adjacent trilayers localise mostly in these single graphene layers. Thus, a strong disorder in the internal layer of gated trilayer graphene does not lead to the destruction of its fundamental electronic properties.

GRAPHICAL ABSTRACT

Keywords:

• Multilayer graphene
• topological states
• Defects in graphene

Acknowledgments

I acknowledge Professor Lutoslaw Wolniewicz for his critical reading of my PhD thesis in 1985 that guided me to thorough research throughout my career.

Disclosure statement

No potential conflict of interest was reported by the author(s).

Notes

1 Although the maximum of the LDOS component in the bottom layer lies outside the 2SGL, it does not exceed the maximum of LDOS situated in the top layer of 2SGL.