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Abstract
The annealing behaviour of 80 keV room temperature arsenic implants in silicon below the amorphization dose has been studied by comparing the physical profile and the electrical profiles following different isochronal anneals.
It is shown that the electrically active fraction, which is about 0.4 after 30 min annealing at 600°C, increases continuously until 100% electrical activation of the arsenic ions is reached at about 900°C.
The activation energy for the annealing process has been found equal to 0.4 eV. A tentative interpretation of the mechanism involved is given.
From the analysis of the physical profiles obtained after isochronal annealing, an effective diffusion coefficient at 900°C equal to 5 × 10−16 cm2 s−1 has been calculated.
