Ion beam induced luminescence spectra of LiNbO₃

Abstract

Luminescence produced during ion beam implantation of LiNbO₃ has been shown to be a sensitive measure of the defect state of the crystals. The spectra may be resolved into a number of component bands which differ as a result of extrinsic impurities, intrinsic defects and manufacturer. The spectra change during the ion implantation and are sensitive to the implantation temperature. Of particular note is evidence for the production of free lithium metal and the data are also interpreted to show a difference in titanium location for dopants introduced during the growth process from those added subsequently by thermal diffusion.