Re-Investigation of the Raman Spectrum of D₂⁺ Bombarded Si Surface

M. S. Mathur Department of Physics, University of Manitoba Winnipeg, R3T 2N2, CANADA

V. P. Derenchuk Department of Physics, University of Manitoba Winnipeg, R3T 2N2, CANADA

J. S. C. McKee Department of Physics, University of Manitoba Winnipeg, R3T 2N2, CANADA

Abstract

The Raman spectrum of the surface of a P-type silicon wafer bombarded with 30 KeV D₂ ⁺ has been re-investigated. The recorded spectrum not only confirms the formation of a-Si layer and various silicon, deuterium and hydrogen complexes, but enables the identification of others.

Key Words:

Raman Scattering from implanted silicon

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Re-Investigation of the Raman Spectrum of D2+ Bombarded Si Surface

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Re-Investigation of the Raman Spectrum of D₂⁺ Bombarded Si Surface