A new deterministic method is presented for solving the semiconductor transport equation of electrons in one‐dimensional silicon device structures. The developed numerical scheme provides a dynamical adaption of the energy discretization to speed up the computation. The adaptive discretization is realized by a time‐ and space‐dependent scaling of the energy variable. Several numerical tests are performed for the bulk case and for a one‐dimensional diode structure. The obtained results prove the efficiency of the proposed method to be significantly increased compared to schemes using fixed energy grids.
Acknowledgments
This work was supported by the Fond zur F¨orderung der wissenschaftlichen Forschung, Vienna, under contract number P17438‐N08; by the European community program IHP, contract number HPRN‐CT‐2002‐00282 on behalf of the CNR; and by MURST Cofin 2004 Mathematical Problem of Kinetic Theories.