Semiconductor to metal transition in strictly two dimension–a comparative study on GaAs and carbon nanotube

Abstract

Choosing GaAs, donor binding energies in two dimension are obtained using Thomas–Fermi and Hartree screening functions within the effective mass approximation. Binding energies are computed both in the hydrogen atom model and D ⁻ ion model. The results show the non-feasibility of semiconductor-to-metal transition (SMT) in two-dimensional system of GaAs. For curiosity we have obtained the donor binding energies in carbon nanotube (CNT), a highly correlated system by considering it as two-dimensional structure. We could observe the feasibility of SMT in CNT. This indicates the strong confinement in nanostructures and the results will be useful for nanodevice fabrication.

Keywords:

• semiconductor-to-metal transition
• GaAs
• carbon nanotube
• impurities in two dimension
• donor binding energies