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Phase Transitions
A Multinational Journal
Volume 85, 2012 - Issue 9
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Original Articles

Resistive transition of the compound LaO0.89F0.11FeGe at 20 K

T.M. Fayez Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, MalaysiaCorrespondence[email protected]
&
K. Ibrahim Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
Pages 777-780 | Received 04 Nov 2011, Accepted 13 Jan 2012, Published online: 21 Feb 2012
 
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Abstract

In this article, the synthesis and electrical resistivity measurement of LaO0.89F0.11FeGe are reported. The onset transition temperature was 20.6 K. Moreover, a clear anomaly was observed at 90 K in the ρ–T curve, which was much lower compared with the quaternary oxypnictides.

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