Abstract
A theoretical model of misfit dislocations and their dipole configurations in nanoscale films with compositional inhomogeneities is suggested. Energy characteristics of misfit dislocation dipoles are calculated. The critical film thickness is estimated which characterizes the energetically favourable generation of misfit dislocation dipoles in films with compositional inhomogeneities. The results of the suggested model account for experimental data obtained by Wang et al. on observation of dislocation dipoles in nanoscale Ga0.5In0.5P films.