High-dose argon implantation in silicon studied by X-ray topography

Abstract

X-ray diffraction topography has been applied to the study of strains and crystal defects induced by 80 keV argon implants in silicon to a dose of 10¹⁷ ions/cm², which is much larger than the amorphizing dose. The as-implanted state is shown to be essentially strain-free, whereas lateral and normal strains develop on annealing below the recrystallization temperature. The strains are associated with a contraction of the implanted layer. Above the recrystallization temperature a strong colour effect has been observed, together with a sign reversal of the strain.