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Abstract
Various processes contributing to the evolution of high-fluence implantation profiles in solids are considered within a general scheme. In particular the influence of atomic mixing is analysed. A Green function is derived which contains all the information on the instantaneous profile. In the Gaussian approximation, simple expressions for parameters which describe the ion-induced relocation effects on the depth profile are found. The contributions of recoil and cascade mixing are discussed. The relative significance of diffusive and collisional processes on the profiles can also be assessed.