Dislocation charges in Ca²⁺‐doped KC1 effects of impurity concentration and temperature

Toshihiko Kataoka Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, N.Y., 14627, U.S.A.; Department of Precision Engineering, Osaka University, Osaka, Japan

Luigi Colombo Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, N.Y., 14627, U.S.A.; Electro-Optics Division, Texas Instruments Inc., Dallas, Texas, 75265, U.S.A.

J. C. M. Li Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, N.Y., 14627, U.S.A.

Abstract

Dislocation charges in Ca²⁺ ‐doped KC1 single crystals were determined by measuring the potential difference developed between the side surfaces while a specimen was being compressed between tilted plates. The dislocation charge was found to be negative, and its magnitude increased with Ca²⁺ concentration (up to a critical resolved shear stress of 4–5MPa) as well as with temperature (between 82 K and room temperature). A sweep-up mechanism for the edge dislocations to collect K⁺ vacancies with thermally activated adsorption and desorption processes is proposed and found to be consistent with experimental observations.

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Dislocation charges in Ca²⁺‐doped KC1 effects of impurity concentration and temperature

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Dislocation charges in Ca²⁺‐doped KC1 effects of impurity concentration and temperature