A new regime of dynamic recovery in the high-temperature deformation of semiconductors

Abstract

It is well established that cross-slip is a dominating process in the second stage of dynamical recovery in elemental and compound semiconductors. In the present work, new experimental results are presented which show that, besides cross-slip, a further hitherto unknown mechanism is involved in the deformation at high strains. This effect is only observed in measurements on crystals deformed along 〈123〉, but not for deformation along 〈111〉. It is suggested that this different behaviour may be traced back to the fact that the 〈111〉 orientation favours cross-slip while the 〈123〉 orientation does not. In Ge, where the stress—strain curves have been studied over a large temperature range, the new mechanism manifests itself in the occurrence of three recovery stages close to the melting point. Dynamic recrystallization is probably not the process underlying the new deformation stage.