Abstract
Dislocation walls on {111} and {110) planes in vapour phase grown ZnSe crystals were studied by light scattering tomography (LST), the cathodoluminescence mode of scanning electron microscopy (CL-SEM) and molten KOH etching. Many Y shaped nodes and hexagonal nets of dislocation lines caused by reactions between the lines were clearly observed on (111) planes by LST, although many dislocations of irregular shape and some parallel arrangements of dislocations were also found. Slip lines on (111) planes were clearly observed as dark lines by CL-SEM which allowed the determination of dislocation glide planes. Undecorated dislocations and slip lines were difficult to observe by LST in these crystals of high refactive index. The dislocations constituting the main part of the dislocation walls and Y shaped nodes were immobile even when the stress was increased sufficiently to fracture the specimen, while some of the other dislocations were displaced.