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Abstract
The structures of inversion domain boundaries in sintered AlN ceramics were studied by convergent-beam electron diffraction and high-resolution electron microscopy. The displacement vectors at a flat and a curved inversion domain boundary were determined to be R F = (0·11 ± 0·02)(0001) + εF, where εF = (0·02 ± 0·05)<1100> and R c = (0·17 ± 0·02)(0001) + εc where εc = (0·03 ± 0·01)<1100> respectively. An interfacial model was derived for the flat inversion domain boundary. The model contains a single Al-O(N) octahedron layer at the interface and has a stacking sequence of …cAaC-cAb-BaAb…, where -cAb- indicates the single Al-O(N) octahedron layer. A high-resolution electron microscopy study supported the present model.