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Abstract
The epitactic growth of calcium hexaluminate (CA6) on the basal plane of alumina was observed during an investigation of the interaction between silicate glass films deposited on single-crystal alumina (α-Al2O3). Two distinctly different orientation relationships occurred. The first can be described as perfect hexagon-on-hexagon epitaxy with (1120)CA6∥(1010)Al2O3 and (0001)Al2O3 ∥(0001)CA6. This relationship has 1.1% lattice misfit in the substrate plane; the misfit is accommodated at the interface by a hexagonal network of misfit dislocations. In the second relationship the CA6 grains are rotated about the substrate normal and can be explained by the coincident-site lattice model for phase boundaries. Both orientation relationships emphasize the influence of substrate crystallography on the crystallization process.