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Original Articles

Metal-insulator transition in doped semiconductors

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Pages 845-858 | Received 09 Mar 1980, Accepted 31 Mar 1980, Published online: 20 Aug 2006
 

Abstract

The positions and properties of the upper Hubbard band are discussed. The Wigner–Seitz method is used to discuss its position. The metal–insulator transition is represented as an overlap between the two bands; it is shown that this model is compatible with observations of the thermopower. An attempt is made to interpret the transition for highly compensated samples. Hopping conduction is discussed, together with the effect of intersite Coulomb interactions.

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