Carrier-generation efficiencies in a-Si : F : H-based photovoltaic devices

Abstract

Photocurrents in a Au Schottky-barrier a-Si : F : H photovoltaic cell configuration have been measured as a function of incident photon energy, temperature and applied electric field. Our results show a near-unity (> 0·95) carrier-generation efficiency in the visible region of the spectra and thereby eliminate geminate recombination as a limitation to the efficiency of solar cell devices using a-Si : F : H as an active component. We show that the short-circuit current can be accounted for by the effective absorption within the depletion width, which is estimated from a simple analysis of our data.