Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

Abstract

Thin films of amorphous P₃N₅ and P₃N₅H_x have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.