Electrophotographic studies of glow-discharge amorphous silicon

Shunri Oda Imaging Science and Engineering Laboratories, Tokyo Institute of Technology, Nagatsuda, Yokohama, 227, Japan

Yoshiaki Saito Imaging Science and Engineering Laboratories, Tokyo Institute of Technology, Nagatsuda, Yokohama, 227, Japan

Isamu Shimizu Imaging Science and Engineering Laboratories, Tokyo Institute of Technology, Nagatsuda, Yokohama, 227, Japan

Eiichi Inoue Imaging Science and Engineering Laboratories, Tokyo Institute of Technology, Nagatsuda, Yokohama, 227, Japan

Abstract

Photoelectronic properties of glow-discharge amorphous silicon (a-Si) relevant to its use as a photoreceptor for electrophotography are described on the basis of the measurements of the xerographic discharge characteristics as well as conventional photoconductivity under various experimental conditions: impurity doping, temperature, and light intensity. A hole μτ product of 2–6 × 10⁻⁸ cm²/V at electric fields of 10³–10⁵ V/cm for intrinsic a-Si: H are obtained.

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Electrophotographic studies of glow-discharge amorphous silicon

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Electrophotographic studies of glow-discharge amorphous silicon

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