Abstract
The vinyl triethoxysilane (A-151) film was prepared by the spraying deposition and dipping deposition technique. The surface topography and growth behavior of A-151 films was investigated by using atomic force microscopy (AFM) and static water contact angle measurements. The results indicate that the topography was strongly affected by the treatment conditions. The surface topography of silane film was changed from the islands morphology to the network morphology with the increasing temperature of SiO2 substrate, and the larger self-polymerized silane aggregation will be formed by using the ultrasonic technology. The hydrophobicity of the SiO2 substrate was improved after A-151 deposition.
Acknowledgments
The authors acknowledge with gratitude the financial support of the National Nature Science Foundation of China (No. 50804004), and the Fundamental Research Funds for the Central Universities.