Silicon Decreases Transpiration Rate and Conductance from Stomata of Maize Plants

ABSTRACT

To characterize the effect of silicon (Si) on decreasing transpiration rate in maize (Zea mays L.) plants, the transpiration rate and conductance from both leaves and cuticula of maize plants were measured directly. Plants were grown in nutrient solutions with and without Si under both normal water conditions and drought stress [20% polyethylene glycol (PEG) concentration in nutrient solution] treatments. Silicon application of 2 mmol L⁻¹ significantly decreased transpiration rate and conductance for both adaxial and abaxial leaf surface, but had no effect on transpiration rate and conductance from the cuticle. These results indicate that the role of Si in decreasing transpiration rate must be largely attributed to the reduction in transpiration rate from stomata rather than cuticula. Stomatal structure, element deposition, and stomatal density on both adaxial and abaxial leaf surfaces were observed with scanning electron microscopy (SEM) and a light microscope. Results showed that changes in neither stomatal morphology nor stomatal density could explain the role of Si in decreasing stomatal transpiration of maize plants. Silicon application with H₄SiO₄ significantly increased Si concentration in shoots and roots of maize plants. Silicon concentration in shoots of maize plants was higher than in roots, whether or not Si was applied. Silicon deposits in cell walls of the leaf epidermis were mostly in the form of polymerized SiO₂.

Keywords:

• conductance
• cuticula
• maize
• silicon
• stomata
• transpiration rate

ACKNOWLEDGMENTS

This study was supported by the National Natural Science Foundation of China (No. 30270788). We thank Dr. Hoffland Ellis for her correction of English.

Notes

∗(significant at P ≤ 0.05 level) shows significance of F value accompanying adjacent means.

∗∗(significant at P ≤ 0.001 level) shows significance of F value accompanying adjacent means.

∗∗(significant at P ≤ 0.001 level) shows significance of F value accompanying adjacent means.