Photodetection Properties of ZnO/Si Heterojunction Diode: A Simulation Study

ABSTRACT

This article reports simulation study and performance analysis of ZnO/Si heterojunction-based UV–visible photodetector. Different electrical and optical parameters such as energy band diagram, electric field profile, dark current, quantum efficiency, responsivity, detectivity, and noise equivalent power of ZnO/Si heterojunction-based photodetector have been simulated as a function of device thickness, operating wavelength, and applied reverse bias voltage. The simulation software ATLAS™ in SILVACO package is used to describe the effect of ZnO/Si interface properties on its photodetection. The value obtained for external quantum efficiency, responsivity, and specific detectivity for ZnO/Si heterojunction-based photodetector were ∼93%, 0.36 A/W, and 7.2 × 10¹⁰ cm Hz^½ W⁻¹, respectively. The estimated values for dark current and noise equivalent power were of the order of 10⁻¹⁴ A and 10⁻¹¹ W, respectively.

KEYWORDS:

• Detectivity
• Noise equivalent power
• Photodetector
• Quantum efficiency
• Responsivity
• ZnO/Si heterojunction

ACKNOWLEDGMENT

The authors are thankful to Motilal Nehru National Institute of Technology, Allahabad, UP, India for extending ATLAS simulation facility to complete this work.

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by Young Faculty Research Fellowship under Visvesvaraya PhD Scheme for Electronics & IT for year 2014–2015, DeitY, Government of India [PhD-MLA-4(17)/2014].

Notes on contributors

Shashikant Sharma

Shashikant Sharma is working toward the PhD degree in the Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur, India. He received his BTech degree in Electronics and Communication Engineering from MLV Govt Textile & Engineering College, Rajasthan, India in 2009, and MTech degree in VLSI Design from ABV-Indian Institute of Information Technology and Management (IIIT), Gwalior, India in 2012. He has published more than 15 papers in various peer review journals and conferences. His research interest includes modelling, simulation and fabrication of various optoelectronic and piezoelectronic devices.

E-mail: [email protected]

A. Sumathi

A. Sumathi received PhD degree in Information and Communication Engineering from Anna University, Chennai, India in 2009; ME degree in Applied Electronics from Anna University, Chennai, India in 2004 and BE degree in Electronics and Communication Engineering from Bharathiar University, Tamilnadu, India in 1994. She is now working as Professor in the Department of Electronics and Communication Engineering, Adhiyamaan College of Engineering, Hosur, Tamilnadu. She has published more than 25 papers in various international journals and conference proceedings.

E-mail: [email protected]

C. Periasamy

C. Periasamy received BE degree in Electronics and Communication Engineering from Periyar University, Tamilnadu, India in 2002 and PhD degree in Electronics Engineering from the Indian Institute of Technology (IIT-BHU), Banaras Hindu University, Varanasi, India, in 2011. He is now working as Assistant Professor in the Department of Electronics Engineering, Malaviya National Institute of Technology, Jaipur, India. He has published more than 35 papers in various international journals and conference proceedings. His research interests cover design, fabrication and characterization of nanomaterial-based electronic and piezoelectronic devices, thin film-based gas sensors, etc.

E-mail: [email protected]