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Abstract
ATLAS TCAD-based comparative investigation (mainly breakdown voltage, cut-off frequency and leakage current) has been presented in this work for different length of gate field plate and source field plate. 127 V of breakdown voltage has been achieved at 0.25 µm gate length having 0.8 µm gate field plate length and 1 µm source field plate length. By amalgamating source field plate, maximum cut-off frequency of 38 GHz was achieved at 0.25 µm channel length. Passivation layer permittivity and barrier thickness has also been used to optimize the device performance. The improvement in breakdown voltage is less prominent than the deterioration in cut-off frequency with the enhancement in passivation layer permittivity. Leakage current of source field plate HEMT has also been studied for different passivation layer permittivity.
Acknowledgements
The authors thank Solid State Physics Laboratory-SSPL-DRDO (1115/CARS-73/TS/SPL/18) for providing necessary help for carrying out this work and one of the authors (Neha) thanks Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi, India for providing necessary guidance.
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Notes on contributors
Neha
Neha received BTech (Electronics and Communication Engineering) and MTech (Electronics and Communication Engineering) from Kurukshetra University and Amity University in 2009 and 2011, respectively. Currently, she is pursuing PhD in microlectronics from Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus. Her research interest includes modeling and simulation of AlGaN/GaN HEMTs. She has authored three papers in international conferences. E-mail: [email protected]
Vandana Kumari
Vandana Kumari was born in New Delhi, India, in 1986. She received BSc (Gen), MSc and PhD from the University of Delhi, Delhi, India in 2006, 2009, and 2014, respectively. Currently, she is Assistance Professor in Maharaja Agrasen College, University of Delhi. Her research interests are in modeling and simulation of unconventional MOSFET architectures. She has authored more than 30 papers in international journals and conferences. E-mail: [email protected]
Mridula Gupta
Mridula Gupta received PhD in optoelectronics from the University of Delhi, India, in 1998. Since 1989, she has been with the Department of Electronic Science, University of Delhi South Campus, India, and is currently a professor. She has authored or co-authored more than 390 publications in international and national journals and conference proceedings. Her current research interests include modeling and simulation of MOSFETs, MESFETs, HEMTs, for microwave applications and Tunnel Field Effect transistor for bio-sensing application. She is a senior member of IEEE, fellow of IETE and Chair Person of Women In Engineering (WIE) IEEE Delhi Section Affinity Group. E-mail: [email protected]
Manoj Saxena
Manoj Saxena received PhD degree from the University of Delhi, in 2006. Presently, he is an associate professor in Deen Dayal Upadhyaya College, University of Delhi. He has authored/co-authored more than 240 technical papers in international journals and conferences in the areas of analytical modeling, and simulation of cylindrical gate MOSFET, junctionless transistor and tunnel FET. He is a senior member of IEEE, fellow of IETE and member of National Academy of Sciences India (NASI), Allahabad, India, Institution of Engineering and Technology (IET), UK, and International Association of Engineers, Hong Kong, Life Member of Indian Science Congress Association (ISCA), Young Associate of Indian Academy of Sciences (IAS), Bangalore, India. He is also Distinguished Lecturer, IEEE Electron Devices Society.