Abstract
The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs.
Acknowledgement
This work was supported by the National Research Foundation of Korea under the Ministry of Education, Science and Technology of Korea through the Grant No. 2011–0028422.