GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation

Abstract

Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

Keywords:

• GaN
• waste water treatment
• thin film
• sulforhodamin B
• photocatalytic
• pulsed laser

Acknowledgments

This work was finically supported by Center of Excellence in Nanotechnology (CENT), KFUPM through NSTIP program under Project #08-NAN93-4 and Natural Science Foundation of Jiangsu Province of China (No: BK2010497).