Influence of Bi₂O₃, TiO₂ Additives and Sintering Process on the Performance of ITO Target Based on Normal Pressure Sintering Method

ABSTRACT

The effects of sintering temperature, heating rate, holding time and sintering additive on the properties of single-phase indium tin oxide (ITO) target, prepared by normal pressure sintering method, were studied systematically. The results showed that target sintered at 1550°C for 10 h with a heating rate of 9°C/min had a higher relative density of 98.7% and a lower resistivity of 4×10^–4 Ω.cm. When bismuth trioxide (Bi₂O₃) was added as a sintering additive, the density of target prepared at 1450°C improved significantly from 87.15% to 93.17%, while the resistivity increased to 73.65×10^–4 Ω.cm due to poor electrical conductivity of Bi₂O₃. Moreover, after adding titanium dioxide (TiO₂) as sintering additive, density of the target sintered at 1450°C improved from 87.15% to 91.43%. Importantly, the resistivity reached the minimum value of 3.05×10^–4 Ω.cm at 1550°C.

GRAPHICAL ABSTRACT

Keywords:

• Indium tin oxide target
• Normal pressure sintering
• Bismuth trioxide
• Titanium dioxide