Design and Simulation of a Zinc Oxide Thin Film Bulk Acoustic Resonator Filter for 2.6 GHz Band Applications

ABSTRACT

This work presents the design and simulation of a zinc oxide based thin film bulk acoustic resonator (TFBAR) bandpass filter for 2.6 GHz band applications. Third and fifth-order filters in ladder topology are designed and compared. The third-order filter has an insertion loss of 1.62 dB and return loss of 18.97 dB with a bandwidth of 80 MHz whereas the fifth-order filter has insertion loss, return loss, and bandwidth of 2.85 dB, 25.28 dB, and 60 MHz, respectively. With a central frequency of 2.67 GHz, the designed filter has applications in the 2.6 GHz (2500–2690 MHz) band, which has been identified by the International Telecommunication Union as a global frequency band for mobile broadband services.

KEYWORDS:

• Bandpass filter
• MBVD equivalent
• TFBAR
• 2.6 GHz band

Acknowledgements

The authors wish to acknowledge Coventor Incorporation for their help and support.

Additional information

Notes on contributors

Jyotirmoy Dutta

Jyotirmoy Dutta is a PhD research scholar in the Department of Electrical Engineering at the School of Engineering, Shiv Nadar University. He obtained his Master's in electronics and communication engineering form NITTTR, Chandigarh. He is working in the area of RF MEMS, specifically, the design and simulation aspect of TFBAR based filters. He is a student member of the Institution of Electrical and Electronics Engineers (IEEE).

E-mail: [email protected]

Atul Vir Singh

Atul Vir Singh received his PhD from the Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, in 2013. He is working in the area of MEMS technologies and has an extensive experience in MEMS processing techniques (surface and bulk micro-machining, anodic bonding, etch-stop, etc.) used to fabricate these devices. In order to promote MEMS research, he is developing a MEMS design and fabrication facility for the postgraduate and research students at the Shiv Nadar University.

E-mail: [email protected]

Sonal Singhal

Sonal Singhal obtained her PhD from the Indian Institute of Technology Roorkee in 2011 during which she also availed Commonwealth Scholarship (Jan 2010 to Jan 2011) as split site scholar at Energy & Sustainable Research Division, University of Nottingham, UK. She has been working in the area of VLSI design and fabrication. Her research interests include topics like design of novel semiconductor, electronic and optoelectronic devices, very large scale integration (VLSI) technology and design, network realization in HDL. She is also a recipient of an externally funded project under the Fast Track Young Scientist Scheme, DST, India (2012) on the fabrication of photo voltaic (PV) devices.

E-mail: [email protected]

Madhur Deo Upadhayay

Madhur Deo Upadhayay received Master of Engineering in microwave communication and radar engineering and Bachelor of Engineering in electronics and communication engineering from Dr. Bhimrao Ambedkar University Agra, India, in 2004 and 2002, and PhD degree in microwave and RF engineering from the Indian Institute of Technology, Delhi, India, in 2014., He is an assistant professor in the Department of Electrical Engineering, Shiv Nadar University, India, where he is involved in teaching and research activities. His research interest includes: microwave integrated circuits (active, passive, reconfigurable), RF MEMS, reconfigurable/active antennas. He is a member of the IEEE, USA, and associate member of the Institution of Electronics and Telecommunication Engineers (IETE) India.

E-mail: [email protected]