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ABSTRACT
In this paper, we report and design a new kind of AlGaN/GaN/InGaN/GaN high electron mobility transistor (HEMT), consisting of T-shaped gate with low resistance contacts, and the performance of a cascode topology low noise amplifier (LNA) with shunt-feedback technique for wideband and flat gain, based on mentioned HEMT. The proposed LNA has ∼17.5 dB of gain from 3 to 10 GHz with a noise figure of 0.7–1.1 dB in the band of interest. The direct current (DC) and radio frequency advantages of the reported HEMT and the superior flat gain performance of the cascode LNA are demonstrated.
Disclosure statement
No potential conflict of interest was reported by the authors.
Additional information
Notes on contributors
Sorour Toufani
Sorour Toufani received the BS degree in electrical engineering from Islamic Azad University Garmsar Branch, Garmsar, Iran, in 2011. She is working towards the MS degree in electronics (electronic devices) at Islamic Azad University Science and Research branch, Tehran, Iran. She is currently working on high electron mobility transistors, microwave circuits, and integrated electron circuit devices.
E-mail: [email protected]
Massoud Dousti
Massoud Dousti received the BS degree in electrical engineering from Orleans University, Orleans, France, in 1991, and the MS degree in electronics (microwave and optics) from Limoges University, Limoges, France, in 1994, and the PhD degree in electronics (active microwave circuits) from the University of Paris VI, Pierre et Marie Currie, in 1999, respectively. He served as a teaching assistant in the Department of Electrical Engineering at Ensea, Cergy Pontoise, France from 1998 to 2000. In 2001, he joined the Department of Electrical Engineering of Science and Research branch, Islamic Azad University, Tehran, Iran, where he is now an associate professor. His research interests are linear and non-linear microwave/RF circuits and systems design, millimetre wave circuits design, and MMIC technology.
E-mail: [email protected]