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ABSTRACT
The authors have proposed a comprehensive analytical model for evaluating the impact ionization rate of electrons in monolayer graphene nanoribbons (GNRs). The impact ionization phenomena have been viewed as a multistage scattering process. All possible combinations of optical phonon scattering and electron–electron collision events prior to the impact ionization have been taken into account in the model. The impact ionization rate of electrons in monolayer GNR has been calculated and results are compared with the numerical data obtained from an analytical model proposed earlier. The effects of temperature and sheet electron concentration on the ionization rate have also been studied.
Acknowledgments
The authors wish to thank Supreme Knowledge Foundation Group of Institutions for providing excellent research facilities. Moreover, Aritra Acharyya is grateful to Professor (Dr) J. P. Bandyopadhyay, Emeritus Fellow (UGC), Institute of Radio Physics and Electronics, University of Calcutta, for providing some valuable suggestions to carry out the present work.
DISCLOSURE STATEMENT
No potential conflict of interest was reported by the authors.
Additional information
Notes on contributors
Antara Banerjee Bhowmick
Antara Banerjee Bhowmick received her BTech and MTech degrees in Electronics and Communication Engineering both from West Bengal Institute of Technology, India, in the years 2008 and 2012, respectively. She is currently carrying out her doctoral research in the same University. Her research interests are semiconductor devices and transport phenomena.
E-mail: [email protected]
Apala Banerjee
Apala Banerjee is presently a final year student of BTech in Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, India. Her research interests are semiconductor devices and transport phenomena.
E-mail: [email protected]
Aditya Raj Pandey
Aditya Raj Pandey is presently a final year student of BTech in Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, India. His research interests are semiconductor devices and transport phenomena.
E-mail: [email protected]
Aloke Yadav
Aloke Yadav is presently a final year student of BTech in Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, India. His research interests are semiconductor devices and transport phenomena.
E-mail: [email protected]
Purbita Pallye
Purbita Pallye is presently a final year student of BTech in Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, India. Her research interests are semiconductor devices and transport phenomena.
E-mail: [email protected]
Aritra Acharyya
Aritra Acharyya was born in 1986. He received his MTech degree from the Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India, in the year 2010. He has submitted his PhD thesis in the University of Calcutta in the year 2014. His research interests are semiconductor devices and transport phenomena. He has published more than 100 research papers in peer-reviewed journals and conference proceedings.
E-mail: [email protected]