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Review Article

Effect of Charge Bump Position Shifting on Negative Resistance and Noise Performance of Lo–Hi–Lo IMPATT

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Pages 2422-2432 | Published online: 09 Jan 2020
 

ABSTRACT

In this paper, the effect of position shifting of charge bump on different microwave parameters, such as the negative resistance, noise measure, quality factor, and series resistance of one-dimensional different compound semiconductor-based DDR IMPATT structures, has been studied using the advanced computer iterative method. A comparison of a crucial parameter, negative resistance, of these devices is obtained for different charge bump positions at different frequencies of a Ka band. The noise measure has been carried out also varying with these different charge bump positions at the depletion layer as noise measure strongly depends on the negative resistance value. Quality factor also varies for these changes of the charge bump position. The noise measurement plays an important role in the choice of structures and operating frequency of the IMPATT device. So, throughout the Ka band, the parameters of these different compound semiconductor-based IMPATT diodes for different charge bump positions are measured and compared and will be well suited for the optimum design in the Ka band.

Additional information

Notes on contributors

J. Banerjee

J Banerjee is currently working in the Department of Electronics and Communication Engineering, MCKV Institute of Engineering, Liluah, India. He has 9 years of teaching experience, and he has published a few papers in international journals and presented at national conferences. His current research interest is in the area of microwave devices.

M. Mitra

M Mitra is currently working in the Department of Electronics and Telecommunication, IIEST, Shibpur, India. He has many years of teaching and research experience. He has published many papers in different reputed international journals. His current research interest is in the area of microwave devices. Email: [email protected]

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