Relative Study on MM-Wave Performance of Group IV-IV and Group III-V Materials Based IMPATT Sources

Abstract

A comparative study is done on Si, 4H-SiC, Wz-GaN and InP based impact avalanche transit time (IMPATT) diodes operating at 94 GHz. A double-iterative simulation procedure is utilized to investigate the DC and small-signal features of the diodes from which corresponding avalanche response times and transit times are obtained. The studies exhibit that SiC and GaN diodes are potential sources for radiating high power at 94 GHz. It is also observed that SiC and GaN diodes are highly appropriate for mm-wave frequency bands due to shorter values of their avalanche response time. The power output for SiC IMPATT source is noticed as 47.61 W and for GaN IMPATT, the same is seen as 1.96 W; corresponding avalanche response times are found to be 2.42 × 10⁻¹⁵ and 3.45 × 10⁻¹⁶ s respectively.

KEYWORDS:

• Avalanche response time
• Double-drift region IMPATT diode
• 4H-SiC
• InP
• Si
• Transit time
• Wz-GaN

Additional information

Notes on contributors

S. J. Mukhopadhyay

S J Mukhopadhyay is presently pursuing her doctoral research in the Department of Electronics and Telecommunication Engineering in Indian Institute of Engineering Science and Technology, Shibpur, Howrah, West Bengal, India. She has carried out research work in the area of microwave devices like IMPATT and its characterization.

A. Acharyya

A Acharyya was born in 1986. He received BE and MTech degrees from IIEST, Shibpur, India, and Institute of Radio Physics and Electronics, University of Calcutta, India, in the years 2007 and 2010 respectively. Subsequently he obtained PhD degree from Institute of Radio Physics and Electronics, University of  Calcutta, in the year 2016. He is currently working as an assistant professor of Electronics and Communication Engineering Department at Cooch Behar Government Engineering College, West Bengal. His research interests are high frequency semiconductor devices. He has already published over 150 research papers in peer reviewed journals and conference proceedings. Email: [email protected]

M. Mitra

M Mitra is the professor and Ex-HOD of Electronics and Telecommunication Engineering Department of Indian Institute of Engineering Science and Technology, Shibpur, Howrah, West Bengal, India. His research interests are fabrication of microwave devices like IMPATT, its characterization, and system development. Email: [email protected]