Finite Element Analysis of Graphene Oxide Hinge Structure-based RF NEM Switch

Abstract

The modelling and simulation of nanoelectromechanical (NEM) switch is indispensable to get optimum device dimensions. The present work deals with the design and simulation of hinge structure-based Graphene oxide (GO) NEM switch. The Finite Element Modeling (FEM) of the NEM switch for different design parameters have performed in COMSOL Multiphysics. Moreover, the radio frequency (RF) performance of the switch structure with minimum pull-in voltage has also been investigated. The results state that pull-in voltage and von Mises stress exhibit a negative correlation with beam length and positive correlation with beam thickness and air gap. Furthermore, a long and thin suspended beam requires low pull-in voltage and undergoes less von Mises stress. The von Mises stress exhibits a strong effect at beam edges, perforation corners, and beam-top electrode interface due to edge termination effect. The present work facilitates optimisation of design parameters of a NEM switch that requires low pull-in voltage, undergoes less von Mises stress, and exhibits good RF performance.

KEYWORDS:

• Design parameters
• Finite element modelling
• Graphene oxide
• Hinge structure
• Pull-in voltage
• RF performance

Additional information

Notes on contributors

Rekha Chaudhary

Rekha Chaudhary received MTech degree in VLSI from Suresh Gyan Vihar University, Jaipur India. She has worked on Design, Development and Application (Micro-Sensys) project for two years at CSIR-CEERI Pilani for two years. Currently, she is a research scholar in the School of Electronics and Electrical Engineering, Lovely Professional University. She is currently working on modeling of graphene materials-based M/NEMS switch. Email: [email protected]

Prachi Jhanwar

Prachi Jhanwar received BSc, MSc and PhD degrees in electronics from Banasthali University. She has done her research on MEMS ohmic switches with Sensor and Nanotechnology group in CSIR-CEERI. Her major research activity includes design and development of RF MEMS capacitive, ohmic contact switches, high k dielectrics and high-power handling of RF MEMS. Email: [email protected]

Prasantha R. Mudimela

Prasantha R Mudimela received his PhD degree from Aalto University, Finland. He has two years of postdoc experience from Belgium and Saudi Arabia. He is having over 13 years of teaching and research experience. Currently, he is working as associate professor at School of Electronics and Electrical Engineering, Lovely Professional University, Punjab India. His research interests are device modelling, 1D/2D nanomaterials synthesis and sensor fabrication. He is a life member of Indian Science Congress Association.