Performance Evaluation of Sub 5 nm GAA NWMBCFET using Silicon Carbide Source/Drain Material

Abstract

A comparison between cylindrical Gate All Around Nano Wire Field Effect Transistor (GAA NWFET) and a cylindrical Gate All Around Nano Wire Multi Bridge Channel Field Effect Transistor (GAA NWMBCFET) for a gate length of 35 and 5 nm has been carried out in this work. The Nanowire device was converted to a Nanowire MBCFET device by incorporating four channels in the cylindrical structure. The Current–Voltage (I-V) characteristics were thus plotted for both the devices where Silicon Carbide (SiC) is used as a material for source and drain regions for GAA NWMBCFET to increase the performance. The inclusion of a multi bridge channel and SiC in the device increase the current drive because of the Ultra-Thin Body (UTB) and vertically created stress. Due to the associative functionality of the multi bridge channel and SiC, the 5 nm gate length of Cylindrical GAA NWMBCFET achieves 75% of the drain current obtained in the 35 nm gate length Cylindrical GAA NWFET. Additionally, the electron mobility is evaluated, and Subthreshold Swing (SS) is also reported.

KEYWORDS:

• Cylindrical GAA NWFET
• Cylindrical GAA NWMBCFET
• MBCFET
• SiC
• Technology computer-aided design (TCAD)
• UTB

ACKNOWLEDGEMENT

The authors are thankful to the management of Kalasalingam Academy of Research and Education for providing fellowship and also thanks VLSI Research Centre for supporting TCAD laboratory facilities during this research work.

Additional information

Notes on contributors

S. Ashok Kumar

S Ashok Kumar received his BTech degree in electronics and communication engineering from Kalasalingam University, India, in 2012, and the ME degree in embedded sytem technologies from Anna University, Chennai, India, in 2014. He is currently pursuing the PhD degree with the Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankoil, Tamil Nadu, India. His current research interests include nanoelectronics, microelectronics, simulation and modeling. E-mail: [email protected]

J. Charles Pravin

J Charles Pravin received his PhD degree in the Department of Electronics and Communication Engineering, Karunya University, Coimbatore, Tamil Nadu, India. He is currently an associate professor in the Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankoil, India. His areas of research include nanoscale device modeling and simulation and VLSI circuit design.