Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET

Abstract

In this paper, a SiGe pocket n-TFET is designed and its electrical performance is extracted using a TCAD simulator. Initially, a comparative study of input characteristics among conventional TFET (Device 1), intrinsic SiGe pocket TFET (Device 2), and doped SiGe pocket TFET (Device 3) is presented. It is seen that Device 2 shows an improved switching ratio (I_ON/I_OFF) compared to other Devices. Furthermore, the RF/analog performance such as transconductance (g_m), output conductance (g_d), intrinsic gain (g_m/g_d), gate capacitance (C_gg), cut-off frequency (f_c), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) is reported for the variation in x of SiGe pocket from 0 to 1. The eBTBT rate and electron density are plotted for the variation in x of SiGe pocket Vertical TFET. The results reveal that the increase in x leads to an improvement in RF/analog performance and the tunneling rate in SiGe pocket Vertical TFET.

KEYWORDS:

• BTBT
• RF/analog performance
• SiGe pocket
• TFET

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Rajesh Saha

Rajesh Saha is assistant professor in the Department of Electronics and Communication Engineering Department, MNIT Jaipur, Rajasthan, India. He received PhD from the Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, India, in 2018. He completed his MTech in mobile communication and computing from the National Institute of Technology Arunachal Pradesh, Nirjuli, India, in 2015 and his BE in electronics and telecommunication engineering from Assam Engineering College, Guwahati, India, in 2012. His research interests include FinFET, tunnel FET, ferro-FinFET, and ferro TFET. Corresponding author. Email: [email protected]

Deepak Kumar Panda

Deepak Kumar Panda received the BTech degree in ECE from NIST, Berhampur, India, in 2010, an MTech degree in microelectronics and VLSI design from the Indian Institute of Technology, Kharagpur, India in 2014 and PhD degree in microelectronics engineering from NIT Silchar, Assam, India, in 2018. He is currently with VIT-AP University, Amaravati, India. His current research interests include micro/nanoelectronics, modeling, and simulation of III-nitride-based HEMT/MOSHEMT and TFET. Email: [email protected]

Rupam Goswami

Rupam Goswami received the doctoral degree in engineering from the National Institute of Technology Silchar, India. Currently, he is with the Department of Electronics and Communication Engineering, Tezpur University, India as assistant professor. His current research interests include (a) simulation and modeling of MOS devices, (b) charcoal electronics, and (c) memristors as sensors. Email: [email protected]