Abstract
The leakage current of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitor etched in non-crystalline phase was studied at the temperature range from room temperature to 80°C. The metal/ferroelectric/metal capacitor structures have a bulk-limited conduction mechanism. In the high electric field, the conduction mechanism is controlled by SCLC with deep traps, while hopping conduction appears to dominate in the middle field region. In the low electric fields, the leakage is controlled by the Ohmic contact.
Acknowledgments
The excellent samples were provided by Prof. Longhai Wang (Wuhan Institute of Technology). The author would like to thank him for the assistance in the experiments and the useful discussions.
Communicated by Dr. Deborah J. Taylor