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Ferroelectrics Letters Section Volume 40, 2013 - Issue 1-3
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Original Articles

Microwave Dielectric Properties of Epitaxial Mn-doped Ba(Zr,Ti)O3 Thin Films on LaAlO3 Substrates

Ming Liu Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, 710049, P. R. China
,
Chunrui Ma Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249
,
Jian Liu Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249
,
Gregory Collins Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249
,
Chonglin Chen Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX, 78249
,
Andy D. Alemayehu Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio, 45469
,
Guru Subramanyam Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio, 45469
,
Chao Dai State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, P. R. China
,
Yuan Lin State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, P. R. China
&
Amar Bhalla Department of Electrical and Computer Engineering, University of Texas at San Antonio, San Antonio, TX, 78249
 show all
Pages 65-69 | Received 30 May 2013, Accepted 30 May 2013, Published online: 13 Aug 2013
 
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Abstract

Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn:BZT //(001)LAO. The microwave dielectric property measurements (13–17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.

Acknowledgments

This research was partially supported by the National Science Foundation under NSF-NIRT-0709293, and the Natural Science Foundation of China under 18110225, 11028409. Also, Dr. Ming Liu and Dr. Chunrui Ma would like to acknowledge the support from the “China Scholarship Council” for their Ph.D researches at UTSA.

Communicated by Prof. Amar S. Bhalla

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