Effect of annealing temperature on electrical properties of Al/ZrO2/p-Si MOS capacitor

Abstract

The present study reveals that ZrO₂ MOS capacitor has been fabricated by RF sputtering technique. The maximum refractive index has been found to be 2.29 at 400 °C. From capacitance-voltage graph, it has been observed that the memory window and accumulation capacitance has been found to be maximum at 400 °C. The maximum memory window and accumulation capacitance has been found to be 0.50 V and 7.00 ×10⁻¹¹ F, respectively. The flat band voltage shifts toward positive side at all temperatures. From current-voltage curve, it has been observed that the leakage current is found to be low at 400 °C and it is order of 10 ^{− 7}A at +20 V.

Keywords:

• Metal-oxide-semiconductor field effect transistor (MOSFET)
• metal-insulator-semiconductor (MIS)
• memory window
• leakage current
• accumulation capacitance
• zirconium oxide (ZrO₂)
• high-k