Abstract
In this letter, we report on the first synthesis of oriented SbNbO4 ferroelectric thin films on Pt coated silicon substrates. Textured SbNbO4 thin films are formed by rapid thermal annealing of films deposited by Ar+ ion-beam sputtering at room temperature. The films are characterized by X-ray diffraction spectra. Ferroelectric P-E loops are measured and dielectric properties are studied at low frequency. The effect of Pt electrodes on the formation of ferroelectric SbNbO4 thin films is discussed.