Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects

Abstract

A quantum-mechanical compact model of the threshold voltage (V _T) for quantum nanowire MOSFETs has been developed. This approach is based on analytical solutions for the decoupled 2D Schrödinger and 1D Poisson equations solved in the silicon channel. A quantum correction based on the perturbation theory has been also introduced to improve the model accuracy. Finally, the validity of the model has been verified by comparison with data obtained with a 2D/3D Poisson-Schrödinger drift-diffusion simulation code.

Keywords:

• Compact modeling
• Threshold voltage
• Quantum nanowire MOSFET
• 2D-quantum confinement effects
• 3D numerical simulation

Acknowledgements

This work is supported by the European Commission in the framework of the Network of Excellence on Silicon-based nanodevices (SINANO, contract IST-506844).

Notes

†Also with the Institut Universitaire de France—IUF

Additional information

Notes on contributors

J. L. Autran

† †Also with the Institut Universitaire de France—IUF