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Abstract
The single crystals of tin monosulphoselenides in the form of a series SnS x Se1−x (where x = 0, 0.25, 0.50,0.75 and 1) have been grown using the direct vapor transport technique (DVT). The analysis of the X-ray diffraction patterns reveals that all crystals belong to the orthorhombic crystal structure. Hall effect measurements were carried out on grown crystals at room temperature. The optical absorption measurements at room temperature have been carried out for all crystals. The values of the band gap were determined at atmospheric pressure and also calculated at high-pressure. Simultaneous thermoelectric power (TEP) and a.c. resistance measurements up to 8 GPa were carried out. The results of the effect of high-pressure on the electrical resistance of the grown crystals are reported in this paper.
Acknowledgement
The authors are much indebted to DAE-BRNS for providing financial assistance to Research Project Sanction No. 99/37/28-BRNS/1004 dated 29-09-1999 for carrying out this work. The authors are very grateful to Prof. P. D. Patel and Prof. A. R. Jani for their valued guidance. A special thank you also goes to Dr. B. K. Godwal (BARC, Mumbai) and Dr. H. D. Hochheimer (Colorado State University, Fort Collins, USA) for their valuable guidance and fruitful discussions.