High pressure–high temperature phase diagram of InSe

Abstract

By combining X-ray diffraction and X-ray absorption spectroscopy, the structural evolution of the InSe alloy has been explored up to 3.3 GPa and 1500 K with the use of the Paris–Edinburgh large volume cell. These conditions allowed us to study the solid and the liquid states and to measure the pressure evolution of the melting point, which increases at a rate of +120 K GPa⁻¹. A temperature‐induced phase transition has been evidenced within the solid phase. This is the first in-situ study of the high temperature solid phase which had so far only been inferred from studies on recovered samples at ambient conditions.

Keywords:

• Semiconductor
• XRD
• EXAFS
• Structure
• Phase transition

Acknowledgement

The experimental data have been collected at ESRF during beam time allocated on Project No. HE1077. We would like to thank the ESRF staff, Michael Borowski and Raphael Weigel. We have benefited from the XRD experimental setup installed by Filipponi et al. [15]. We are particularly grateful to Adriano Filipponi, Andrea Di Cicco, Simone De Panfilis and Jean-Paul Itié for the help provided in the alignment of the Paris–Edinburgh cell with respect to the XRD system.