High-pressure electrical transport measurements on p-type GaSe and InSe

Abstract

We performed high-pressure Hall effect and resistivity measurements in p-type GaSe and InSe up to 12 GPa. The pressure behaviour of the transport parameters shows dramatic differences between both materials. In GaSe, the hole concentration and mobility increase moderately and continuously. In InSe, the hole mobility raises rapidly and the hole concentration increases abruptly near 0.8 GPa. The observed results are attributed to the different pressure evolution of the valence-band structure in each material. In InSe a carrier-type inversion is also detected near 4.5 GPa.

Keywords:

• GaSe
• InSe
• High pressure
• Transport properties

Acknowledgements

This study was supported by the MCYT of Spain (Grant: MAT2004-05867-C03-01) and Generalitat Valenciana (Grant: ACOMP06/181). D.E. thanks the support from the MCYT through the ‘Ramón y Cajal’ program.