Hydrostatic pressure effect on electronic and magnetic states in R_1−xD_xMnO₃ orthomanganites

Abstract

The effect of applied pressure (up to 14 kbar) on the electrical resistivity and on electronic and magnetic transition temperatures was investigated in R_1−x D _x MnO₃ orthomanganites for different carrier concentration ranges: hole-doped (x = 0.3, R = La, Nd, Pr, D = Ca, Sr), half-doped (x = 0.5, R = Pr, D = Sr) and electron-doped (x = 0.84, R = Pr, Eu, Gd, D = Ca). The applied pressure effect on stability of electronic and magnetic phases of R_1−x D _x MnO₃ is compared to the internal pressure (⟨ r _A⟩ variation) effect and is discussed on the basis of coexistence of different mechanisms of exchange and electron–phonon interactions.

Keywords:

• Hydrostatic pressure
• Manganites
• Magnetic and electronic phase transitions

Acknowledgements

The work was supported by the NATO-Linkage Grant CBP.MD.CLG. 981238 and by the Program of the Presidium of RAS N.3, P-09.